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  1999. 11. 30 1/3 semiconductor technical data KTA708 epitaxial planar pnp transistor revision no : 2 voltage regulator, relay, ramp driver, industrial use features  high voltage : v ceo =-60v(min.).  high current : i c (max.)=-1a.  high transition frequency : f t =150mhz(typ.).  wide area of safe operation.  complementary to ktc1008. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current dc i c -1 a pulse i cp -2 collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-4v, i c =0 - - -100 na dc current gain h fe (1) v ce =-2v, i c =-50ma 60 - 200 h fe (2) v ce =-2v, i c =-1a 30 - - collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -60 - - v collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - -0.2 -0.7 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-50ma - -0.85 -1.2 v transition frequency f t v ce =-10v, i c =-50ma - 150 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 12 - pf note : h fe (1) classification o:60  120, y:100  200
1999. 11. 30 2/3 KTA708 revision no : 0 collector output capacitance ob collector-base voltage v (v) cb v - i c collector current i (ma) c collector current i (ma) collector-emitter voltage v (v) 0 ce 0 i - v c ce -2 -4 -6 -200 -400 -600 -800 ce(sat) c -8 i =0ma b collector current i (ma) dc current gain h fe c h - i fe c c (pf) transition frequency f (mhz) collector current i (ma) c t f - i t c ce(sat) collector-emitter saturation -10 -12 -1000 i =-1ma b i =-2ma b i =-3ma b i =-4ma b i =-6ma b i =-8ma b i =-10ma b collector-emitter voltage v (v) collector current i (ma) -600 0 0 -400 -200 -0.2 -1000 -800 c -1.0 -0.4 -0.6 i =0ma -0.8 b -1.2 ce i - v c ce i =-2ma b i =-4ma b i =-6ma b i =-10ma b i =-20ma b i =-30m a b i =-50 m a b -1 -3 -1k -5k 10 -100 -10 -30 -300 30 50 100 300 500 1k common emitter ta=25 c v =-2v ce 3 100 -1 c - v ob cb -3 -5 -10 -30 -50 -100 5 10 30 50 common emitter f=1mhz ta=25 c -1 -3 -10 -100 10 -300 -30 30 50 100 300 common emitter ta=25 c v =-10v ce -10 -1 -0.01 -0.03 -3 -1k -100 -30 -300 -5k -0.05 -0.1 -0.3 -1.0 -0.5 common emitter ta=25 c voltage v (v) i /i = 1 0 c b
1999. 11. 30 2/3 KTA708 revision no : 0 collector output capacitance ob collector-base voltage v (v) cb v - i c collector current i (ma) c collector current i (ma) collector-emitter voltage v (v) 0 ce 0 i - v c ce -2 -4 -6 -200 -400 -600 -800 ce(sat) c -8 i =0ma b collector current i (ma) dc current gain h fe c h - i fe c c (pf) transition frequency f (mhz) collector current i (ma) c t f - i t c ce(sat) collector-emitter saturation -10 -12 -1000 i =-1ma b i =-2ma b i =-3ma b i =-4ma b i =-6ma b i =-8ma b i =-10ma b collector-emitter voltage v (v) collector current i (ma) -600 0 0 -400 -200 -0.2 -1000 -800 c -1.0 -0.4 -0.6 i =0ma -0.8 b -1.2 ce i - v c ce i =-2ma b i =-4ma b i =-6ma b i =-10ma b i =-20ma b i =-30m a b i =-50 m a b -1 -3 -1k -5k 10 -100 -10 -30 -300 30 50 100 300 500 1k common emitter ta=25 c v =-2v ce 3 100 -1 c - v ob cb -3 -5 -10 -30 -50 -100 5 10 30 50 common emitter f=1mhz ta=25 c -1 -3 -10 -100 10 -300 -30 30 50 100 300 common emitter ta=25 c v =-10v ce -10 -1 -0.01 -0.03 -3 -1k -100 -30 -300 -5k -0.05 -0.1 -0.3 -1.0 -0.5 common emitter ta=25 c voltage v (v) i /i = 1 0 c b
1999. 11. 30 3/3 KTA708 revision no : 0 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta safe operating area ce collector-emitter voltage v (v) -0.5 -1 -3 -10 -0.01 c collector current i (a) -30 -100 -5 -50 -0.005 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 i cp c i max. dc operation 1msec 10m se c 10 0 mse c 1sec p (mw) 20 40 60 80 100 120 140 160 200 400 600 800 1k 1.2k 1pulse


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